SSF6401

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

-0.4

-1

V

V =-4.5V, I

GS

50

Drain-Source On-State Resistance

85

mΩ

Forward Transconductance

g

V =-5V,I

FS

DS

7

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

740

PF

lss

Output Capacitance

290

PF

V =-4V,V

DS

F=1.0MHz

190

PF

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

27

nS

d(on)

Turn-on Rise Time

t

60

nS

r

Turn-Off Delay Time

110

nS

V =-10V,I

Turn-Off Fall Time

DD

L

80

nS

Total Gate Charge

Q

7.8

15

nC

g

Gate-Source Charge

1.2

nC

V =-4V,I

Gate-Drain Charge

DS

=-4.5V

GS

1.6

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =-3.3A

-1.2

V

SD

GS

S

Diode Forward Current (Note 2)

I

-1.4

A

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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