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SSF7510 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF7510 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 1of5 SSF7510 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25ْC Continuous drain current,VGS@10V 75 ID@Tc=100ْC Continuous drain current,VGS@10V 70 IDM Pulsed drain current ① 300 A PD@TC=25ْC Power dissipation 150 W Linear derating factor 2.0 W/ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 480 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — RθJA Junction-to-ambient — — 62 ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 75 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 0.007 0.01 Ω VGS=10V,ID=40A VGS(th) Gate threshold voltage 2.0 2.7 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A —— 1 VDS=75V,VGS=0V IDSS Drain-to-Source leakage current — — 10 μA VDS=75V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF7510 TOP View (TO220) ID=75A BV=75V Rdson=10mohm Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7510 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.8mohm. Application: Power switching application |
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