2008.8.1

Version : 1.0

page

2of5

SSF7510

Gate-to-Source reverse leakage

—

—

-100

Total gate charge

—

90

—

Gate-to-Source charge

—

14

—

Gate-to-Drain("Miller") charge

—

24

—

nC

Turn-on delay time

—

18.2

—

Rise time

—

15.6

—

Turn-Off delay time

—

70.5

—

Fall time

—

13.8

—

nS

Input capacitance

—

3150

—

Output capacitance

—

300

—

Reverse transfer capacitance

—

240

—

pF

f=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

.

(Body Diode)

—

—

75

Pulsed Source Current

.

(Body Diode) ①

—

—

300

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Diode Forward Voltage

—

—

1.3

V

Reverse Recovery Time

－

57

—

nS

Reverse Recovery Charge

－

107

—

nC

di/dt=100A/μs ③

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Gate charge test circuit:

EAS test circuits:

Notes:

①

Repetitive rating; pulse width limited by max junction temperature.

②

Test condition: L =0.3mH, ID = 57A, VDD = 47V

③

Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C