© Semiconductor Components Industries, LLC, 2004

June, 2004 − Rev. 3

1

2N5550/D

2N5550, 2N5551

Preferred Device

Amplifier Transistors

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

2N5550

2N5551

Unit

Collector − Emitter Voltage

140

160

Vdc

Collector − Base Voltage

160

180

Vdc

Emitter − Base Voltage

6.0

Vdc

Collector Current − Continuous

600

mAdc

Total Device Dissipation

Derate above 25

°C

625

5.0

mW

mW/

°C

Total Device Dissipation

Derate above 25

°C

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

200

°C/W

Thermal Resistance,

Junction−to−Case

83.3

°C/W

TO−92

CASE 29

STYLE 1

1 2

3

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

2

BASE

1

EMITTER

55xx

Specific Device Code

Y

= Year

WW

= Work Week

MARKING

DIAGRAM

2N

55xx

YWW