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TLE4209G Datasheet(PDF) 6 Page - Infineon Technologies AG |
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TLE4209G Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 15 page ![]() TLE4209G General Product Characteristics Data Sheet 6 Rev. 1.3, 2008-02-04 4 General Product Characteristics 4.1 Absolute Maximum Ratings Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Operating Range Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. Absolute Maximum Ratings 1) T j = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design. Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Voltages 4.1.1 Supply voltage V S -0.3 45 V – 4.1.2 Supply voltage V S -1 – V t < 0.5 s; I S > -2 A 4.1.3 Logic input voltages (FB, REF, RANGE, HYST) V I -0.3 20 V – Currents 4.1.4 Output current (OUT1, OUT2) I OUT – – A internally limited 4.1.5 Output current (Diode) I OUT -0.9 0.9 A – 4.1.6 Input current (FB, REF, RANGE, HYST) I IN -2 -6 2 6 mA mA t < 2 ms; t/T < 0.1 Temperatures 4.1.7 Junction temperature T j -40 150 °C– 4.1.8 Storage temperature T stg -50 150 °C– Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. 4.2.1 Supply voltage V S 818 V After V S rising above V UV ON 4.2.2 Supply voltage increasing V S -0.3 V UV ON V Outputs in tristate 4.2.3 Supply voltage decreasing V S -0.3 V UV OFF V Outputs in tristate 4.2.4 Output current I OUT1-2 -0.7 0.7 A – 4.2.5 Input current (FB, REF) I IN -50 500 µA– 4.2.6 Junction temperature T j -40 150 °C– |
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