HWS503

GaAs 0.5-6GHz DPDT Switch

January 2009

V1

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw

Typical Performance Data with 8pF

Capacitors @ +25°C

Insertion loss vs. Frequency

-1.2

-0.9

-0.6

-0.3

0

22.533.5

4

4.555.5

6

Frequency (GHz)

Isolation vs. Frequency

-30

-25

-20

-15

-10

-5

2

2.5

3

3.544.555.5

6

Frequency (GHz)

Input return loss vs. Frequency

-30

-25

-20

-15

-10

-5

2

2.5

3

3.544.555.5

6

Frequency (GHz)

Absolute Maximum Ratings

Parameter

Absolute Maximum

RF Input Power

+34dBm @ +3V

Control Voltage

+6V

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

Electrostatic Discharge

Machine Model

Class M1

Pin Out

ANT2

3

2

1

4

5

6

ANT1

OUT1

(TX)

VC2

OUT2

(RX)

VC1

Note:

RF ports.

2. Exposed pad in the bottom must be connected to

ground by via holes.

3. TX and RX ports can be used interchangeably.

Truth Table

State

VC1

VC2

ANT1

ANT2

1

0

1

TX

RX

2

1

0

RX

TX

‘1’ = +3V to +5V

‘0’ = 0V to +0.2V