TAS5613 datasheet(9/27 Pages) TI

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TAS5613

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SLAS676 – NOVEMBER 2009

AUDIO CHARACTERISTICS (BTL)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1kHz, PVDD_X = 36V,

GVDD_X = 12V, RL = 4Ω, fS = 400kHz, ROC = 30kΩ, TC = 75°C, Output Filter: LDEM = 7μH, CDEM = 680nF, mode = 010,

unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RL = 3Ω, 10% THD+N (ROC = 22kΩ, add

200

Schottky diodes from OUT_X to GND_X)

RL = 4Ω, 10% THD+N

150

Power output per channel

RL = 3Ω, 1% THD+N (ROC = 22kΩ, add

160

Schottky diodes from OUT_X to GND_X)

RL = 4Ω, 1% THD+N

125

THD+N

Total harmonic distortion + noise

1 W

0.03%

A-weighted, AES17 filter, Input Capacitor

Output integrated noise

185

μV

Grounded

|VOS|

Output offset voltage

Inputs AC coupled to GND

SNR

Signal-to-noise ratio(1)

100

DNR

Dynamic range

100

Pidle

Power dissipation due to Idle losses (IPVDD_X)

PO = 0, 4 channels switching

(2)

1.8

(1)

SNR is calculated relative to 1% THD+N output level.

(2)

Actual system idle losses also are affected by core losses of output inductors.

AUDIO CHARACTERISTICS (PBTL)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1kHz, PVDD_X = 36V,

GVDD_X = 12V, RL = 2Ω, fS = 400 kHz, ROC = 30kΩ, TC = 75°C, Output Filter: LDEM = 7μH, CDEM = 680nF, MODE = 101-BD,

unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RL = 2Ω, 10% THD+N

300

RL = 3Ω, 10% THD+N

200

RL = 4Ω, 10% THD+N

160

Power output per channel

RL = 2Ω, 1% THD+N

250

RL = 3Ω, 1% THD+N

160

RL = 4Ω, 1% THD+N

130

THD+N

Total harmonic distortion + noise

1 W

0.05%

Output integrated noise

A-weighted

182

μV

SNR

Signal to noise ratio(1)

A-weighted

100

DNR

Dynamic range

A-weighted

100

Pidle

Power dissipation due to idle losses (IPVDD_X) PO = 0, 4 channels switching

(2)

1.8

(1)

SNR is calculated relative to 1% THD+N output level.

(2)

Actual system idle losses are affected by core losses of output inductors.

ELECTRICAL CHARACTERISTICS

PVDD_X = 36V, GVDD_X = 12V, VDD = 12V, TC (Case temperature) = 75°C, fS = 400kHz, unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION

Voltage regulator, only used as reference

VREG

VDD = 12V

3.3

3.6

node

Analog comparator reference node,

1.5

1.75

1.9

VI_CM

Operating, 50% duty cycle

IVDD

VDD supply current

Idle, reset mode

50% duty cycle

IGVDD_x

Gate-supply current per half-bridge

Reset mode

1.5

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