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2N4347 Datasheet(PDF) 2 Page - Comset Semiconductor

Part # 2N4347
Description  HIGH POWER INDUSTRIAL TRANSISTORS
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N4347 Datasheet(HTML) 2 Page - Comset Semiconductor

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COMSET SEMICONDUCTORS
2/3
2N3442
2N4347
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
2N4347
1.75
RthJC
Thermal Resistance, Junction to Case
2N3442
1.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
2N4347 120
-
-
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (1)
IC=200 mAdc, IB=0
2N3442 140
-
-
Vdc
IC=0.1 Adc
2N4347 130
-
-
VCER(SUS)
RBE=100Ω
Collector-Emitter
Sustaining Voltage
IC=0.2 Adc
2N3442 150
-
-
V
VCE=100 Vdc, IB=0
2N4347
-
-
200
ICEO
Collector-Emitter Current
VCE=140 Vdc, IB=0
2N3442
200
mAdc
VCE=125 Vdc, VEB(off)=1.5 Vdc
--
2.0
VCE=120 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
2N4347
10
VCE=140 Vdc, VEB(off)=1.5 Vdc
--
5.0
ICEX
Collector Cutoff Current
VCE=140 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
2N3442
--
30
mAdc
IEBO
Emitter Cutoff Current
VBE=7.0 Vdc, IC=0
2N4347
2N3442
--
5.0
mAdc
IC=2.0 Adc, VCE=4.0 Vdc
15
-
60
IC=5.0 Adc, VCE=4.0 Vdc
2N4347
10
-
-
IC=3.0 Adc, VCE=4.0 Vdc
20
-
70
hFE
DC Current Gain
IC=10 Adc, VCE=4.0 Vdc
2N3442
4.0
-
-
-
IC=2.0 Adc, IB=200 mAdc
--
1.0
IC=5.0 Adc, IB=0.63 Adc
2N4347
--
2.0
IC=3.0 Adc, IB=0.3 Adc
--
1.0
VCE(SAT)
Collector-Emitter
saturation Voltage
IC=10 Adc, IB=0.2 Adc
2N3442
--
5.0
Vdc



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