BD131 datasheet(2/2 Pages) COMSET

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COMSET SEMICONDUCTORS

PNP BD132

NPN BD131

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

IE=0 , -

VCB=40 V

-ICBO

Collector cut-off current

IE=0 , -

VCB=40 V ,Tj= 150°C

500

µA

-IEBO

Emitter cut-offcurrent

IC=0, -VEB=3 V

µA

-IC=0.5 A, -IB=50 mA

0.3

-VCE(SAT)

Collector-Emitter saturation

Voltage

-IC=2.0 A, -IB=200 mA

1.2

-IC=0.5 A, -IB=50 mA

0.7

-VBE(SAT)

Base-Emitter saturation

Voltage

-IC=2.0 A, -IB=200 mA

1,5

-VCE=12 V, -IC=500m A

hFE

DC Current Gain

-VCE=1 V, -IC=2 A

MECHANICAL DATA CASE TO-126

DIMENSIONS

inches

min

max

min

max

7.4

7.8

0.295

0.307

10.5

10.8

0.413

0.425

2.4

2.7

0.094

0.106

0.7

0.9

0.027

0.035

2.2 typ.

0.087 typ.

0.49

0.75

0.019

0.029

4.4 typ.

0.173 typ.

2.54 typ.

0.100 typ.

15.7 typ.

0.618 typ.

1.2 typ.

0.047 typ.

3.8 typ.

0.149 typ.

3.0

3.2

0.118

0.126

Pin 1 :

Emitter

Pin 2 :

Collector

Case :

Base

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