BUV23 datasheet(1/2 Pages) COMSET

Part #	BUV23

Description	POWER SWITCH APPLICATIONS

PDF	2 Pages

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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COMSET SEMICONDUCTORS

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NPN BUV23

The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.

They are intended for use in power switching appications in military and industrial equipments.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCEO

Collector-Emitter Voltage

IB = 0

325

V

VCBO

Collector-Base Voltage

IE = 0

400

V

VEBO

Emitter-Base Voltage

IC = 0

7.0

V

VCEX

Collector-Emitter Voltage

VBE = -1.5V

400

V

VCER

Collector-Emitter Voltage

RBE <= 100 Ω

390

V

IC

Collector Current

30

A

ICM

Collector Peak Current

tp = 10ms

40

A

IB

Base Current

6A

Pt

Total Power Dissipation

@ TC = 25°

250

Watts

TJ

Junction Temperature

200

°C

TStg

Storage Temperature

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Thermal Resistance, Junction to Case

0.7

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(SUS)

Collector-Emitter

Sustaining Voltage (1)

IC=200 mA, L= 25mH

325

-

V

VEB0(SUS)

Emitter-BaseBreakdown

Voltage (1)

IC=0A , IE=50 mA

7-

-

V

ICEO

Collector Cutoff Current

VCE=260 V , IB=0A

--

3

mA

VCE= VCEX , VBE= -1.5V

--

3

ICEX

Collector Cutoff Current

VCE= VCEX , VBE= -1.5V, Tcase = 125°C

--

12

mA

P

PO

OW

WE

ER

R S

SW

WIIT

TC

CH

H A

AP

PP

PL

LIIC

CA

AT

TIIO

ON

NS

S

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