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MJ3000 Datasheet(PDF) 1 Page - Comset Semiconductor |
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MJ3000 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page  Page 1 of 3 COMPLEMENTARY POWER DARLINGTONS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ2500 MJ3000 60 VCBO Collector-Base Voltage IE=0 MJ2501 MJ3001 80 Vdc MJ2500 MJ3000 60 VCEO Collector-EmitterVoltage IB=0 MJ2501 MJ3001 80 Vdc MJ2500 MJ3000 VEBO Emitter-Base Voltage IC=0 MJ2501 MJ3001 5.0 Vdc MJ2500 MJ3000 IC Collector Current MJ2501 MJ3001 10 Adc MJ2500 MJ3000 IB Base Current MJ2501 MJ3001 0.2 Adc MJ2500 MJ3000 PT Power Dissipation @ TC < 25° MJ2501 MJ3001 150 Watts MJ2500 MJ3000 TJ Ts Junction Storage Temperature MJ2501 MJ3001 200 -65 to +200 °C The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. |
Similar Part No. - MJ3000 |
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Similar Description - MJ3000 |
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