ECH8201

No. A1555-1/4

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer

's

products or equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Applications

•

High-power IGBT/MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers.

Features

•

Adoption of FBET, MBIT process.

•

High current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High speed switching.

•

High allowable power dissipation.

•

Halogen free compliance.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

100

V

Collector-to-Emitter Voltage

VCES

100

V

Collector-to-Emitter Voltage

VCEO

50

V

Emitter-to-Base Voltage

VEBO

6V

Collector Current

IC

10

A

Collector Current (Pulse)

ICP

20

A

Base Current

IB

1A

Collector Dissipation

PC

1.6

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55 to +150

°C

Marking : HA

Ordering number : ENA1555

11310EA TK IM TC-00002234

SANYO Semiconductors

DATA SHEET

High-Current Switching Applications

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