TLP559 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

TLP559(IGM)

2002-05-27

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Forward Current

(Note 1)

Pulse Forward Current

(Note 2)

IFP

Peak Transient Forward Current

(Note 3)

IFPT

Reverse Voltage

Diode Power Dissipation

(Note 4)

Output Current

Peak Output Current

IOP

Output Voltage

−0.5~20

Supply Voltage

VCC

−0.5~30

Output Power Dissipation

(Note 5)

100

Operating Temperature Range

Topr

−55~100

°C

Storage Temperature Range

Tstg

−55~125

°C

Lead Solder Temperature(10s)

(Note 6)

Tsol

260

°C

Isolation Voltage(AC,1min.,R.H.≤60%,Ta=25°C)

(Note 7)

BVS

2500

Vrms

(Note 1) Derate 0.5mA above 70°C.

(Note 2) 50% duty cycle,1ms pulse width.

Derate –1.0mA/°C above 70°C.

(Note 3) Pulse width PW≤1µs,300pps.

(Note 4) Derate 0.9mW/°C above 70°C.

(Note 5) Derate 2mW/°C above 70°C.

(Note 6) Soldering portion of lead : up to 2mm from the body of the device.

(Note 7) Device considerd a two terminal device : pins1,2,3 and 4 shorted together and

pins5,6,7 and 8 shorted together.

ELECTRICAL CHARACTERISTICS (Ta = 25℃

℃

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

IF = 16 mA

―

1.65

1.85

Forward Voltage

Temperature Coefficient

∆VF /∆Ta

IF = 16 mA

―

−2

―

mV /°C

Reverse Current

VR = 5 V

―

µA

Capacitance between Terminal

V = 0, f = 1 MHz

―

IOH (1)

IF = 0 mA, VCC = VO = 5.5 V

―

500

IOH (2)

IF = 0 mA, VCC = 30 V

VO = 20 V

―

High Level Output Current

IOH

IF = 0 mA, VCC = 30 V

VO = 20 V, Ta = 70°C

―

µA

High Level Supply Voltage

ICCH

IF = 0 mA, VCC = 30 V

―

0.01

µA

Supply Voltage

VCC

ICC = 0.01 mA

―

Output Voltage

IO = 0.5 mA

―

TLP559 Datasheet(PDF) 2 Page - Toshiba Semiconductor

TLP559 Datasheet(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

Datasheet Download

Link URL