CHA2157

Ref. : DSCHA21579090

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

55-60GHz Low Noise / Medium Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2157 is a two stages low noise and

medium power amplifier. It is designed for a

wide range of applications, from military to

commercial

communication

systems. The

backside of the chip is both RF and DC grounds.

This helps simplify the assembly process.

The circuit is manufactured with a HEMT

process, 0.15µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

3.5 dB noise figure

10 dB

± 1dB gain

15 dBm output power (-1dB gain comp.)

DC power consumption, 80mA @ 3.3V

Chip size :

1.71 x 1.04 x 0.10 mm

-20

-15

-10

-5

0

5

10

15

55

56

57

58

59

60

Frequency (GHz)

Gain

S11

S22

Typical on Wafer Measurements

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

55

60

GHz

G

Small signal gain

8

10

12

dB

NF

Noise figure

3.5

4.5

dB

P1dB

Output power at 1dB gain compression

13

15

dBm

Id

Bias current

80

150

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !