CHA2291

Ref. : DSCHA22912149 - 29-May-021

1/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

10-18GHz Low Noise, Variable Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2291 is a high gain

four-stage

monolithic low noise amplifier with variable gain.

It is designed for a wide range of applications,

from

military

to

commercial

communication

systems.The backside of the chip is both RF and

DC grounded. This helps simplify the assembly

process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

Typical on wafer measurements : Gain & NF

Main Characteristics

Tamb. = 25°C

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

10

18

GHz

G

Small signal gain

23

dB

NF

Noise figure

2.2

dB

Gctrl

Gain control range with Vc variation

20

dB

Id

Bias current

180

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

V5

Vd2,3,4

Vg1

Vg2 Vg3,4 Vc

0

2

4

6

8

10

12

14

16

18

20

22

24

26

10

11

12

13

14

15

16

17

18

Frequency (GHz)

Gain (dB)

NF (dB)