CHA3063

Ref : DSCHA30632263 -20-Sept.-02

1/7

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

5.5-23GHz Driver Amplifier

GaAs Monolithic Microwave IC

Description

The

CHA3063

is

a

two-stage

general

purpose

monolithic

medium

power

amplifier.The backside of the chip is both RF

and DC grounds.This helps simplify the

assembly process.

The circuit is manufactured with a PM-

HEMT process : 0.25µm gate length, via

holes through the substrate, air bridges and

electron beam gate lithography.

It is supplied in chip form.

Main Feature

§ Broad band performance 5.5-23GHz

§ 21dBm output power (Psat)

§ 19dB gain, ± 1dB gain flatness

§ PAE:11%@P-1dB typical

On wafer typical measurements

Main Characteristics

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

5.5

23

GHz

G

Small signal gain

18

19

dB

Pout

Output power, Pin=0dBm

+18

+20

dBm

Id_small_signal Bias current

160

210

mA

ESD Protection : Electrostatic discharge sensitive device observe handling precautions !

-24

-20

-16

-12

-8

-4

0

4

8

12

16

20

24

2

4

6

8

10

12

14

16

18

20

22

24

Frequency ( GHz )

NF

dBS21

dBS11

dBS22