CHA5290

Ref. DSCHA52902295 -22-Oct.-02

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

17.7-24GHz Medium Power Amplifier

GaAs Monolithic Microwave IC

Description

The

CHA5290

is

a

high

gain

four-stage

monolithic

medium

power

amplifier.

It

is

designed for a wide range of applications, from

military

to

commercial

communication

systems. The backside of the chip is both RF

and

DC

grounds.

This

helps

simplify the

assembly process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Performances : 17.7 -24GHz

■ 26dBm output power @ 1dB comp. gain

■ 26 dB ± 1dB gain

■ DC power consumption, 400mA @ 6V

■ Chip size :

3.43 x 1.57 x 0.05 mm

Vd1

Vd2

Vd3

Vd4

Vg1,2

Vg3

Vg4

Vd4

Typical on jig Measurements

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

17.7

24

GHz

G

Small signal gain

26

dB

P1dB

Output power at 1dB gain compression

26

dBm

Id

Bias current

400

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

-30

-26

-22

-18

-14

-10

-6

-2

2

6

10

14

18

22

26

30

34

14

16

18

20

22

24

26

28

30

32

34

Frequency (GHz)

S11 (dB)

S21 (dB)

S22 (dB)