CHA5296

Ref. : DSCHA52962147 - 27-May-02

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

27-30GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The

CHA5296

is

a

high

gain three-stage

monolithic high power amplifier. It is designed for

a wide range of applications, from military to

commercial

communication

systems. The

backside of the chip is both RF and DC grounds.

This helps simplify the assembly process.

The circuit is manufactured with a PM-HEMT

process on 50µm substrate thickness, 0.25µm

gate length, via holes through the substrate, air

bridges and electron beam gate lithography.

It is available in chip form.

Main Features

■ Performances : 27-30GHz

■ 29dBm output power @ 1dB comp. gain

■ 15 dB ± 1dB gain

■ DC power consumption, 850mA @ 6V

■ Chip size :

3.80 x 2.52 x 0.05 mm

-20

-15

-10

-5

0

5

10

15

20

20

22

24

26

28

30

32

34

36

Frequency (GHz)

S22

S11

Typical on jig Measurements

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

27

30

GHz

G

Small signal gain

14

15

dB

P1dB

Output power at 1dB gain compression

28

29

dBm

Id

Bias current

850

1000

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !