X-band High Power Amplifier

CHA7010

Ref. : DSCHA70102175 -24-June-02

6/7

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Assembly recommendations

Lbonding

C1

C1

C1

C1

C1

C1

C1

C1

C2

C2

C2

C2

Lbonding

Vctr

Vctr

Vc

Vc

For thermal and electrical considerations, the chip should be brazed on a metal base

plate.

The RF, DC and modulation port inter-connections should be done according to the

following table:

Port

Connection

External capacitor

IN (1)

Inductance (Lbonding) = 0.4nH

OUT (13)

Inductance (Lbonding) = 0.4nH

Vc (6, 11, 15, 20))

Inductance ~ 1nH

C1 ~ 100pF

C2 ~ 10nF

Vctr (4, 9, 17, 22)

Inductance ~ 1nH

C1 ~ 100pF