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LTC4011 Datasheet(PDF) 18 Page - Linear Technology |
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LTC4011 Datasheet(HTML) 18 Page - Linear Technology |
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18 / 26 page ![]() LTC4011 4011fb applicaTions inForMaTion operations.However,thispracticeisnotrecommended forNiMHcellschargedwellaboveorbelowtheir1Crate, becausefastchargeterminationbasedsolelyonvoltage inflectionmaynotbeadequatetoprotectthebatteryfrom asevereovercharge.Aresistorbetween10kand20kmay beusedtoconnectVTEMPtoVRTifthepausefunctionis stilldesired. INTVDDRegulatorOutput IfBGATEisleftopen,theINTVDDpinoftheLTC4011can beusedasanadditionalsourceofregulatedvoltageinthe hostsystemanytimeREADYisactive.Switchingloads onINTVDDmayreducetheaccuracyofinternalanalog circuits used to monitor and terminate fast charging. Inaddition,DCcurrentdrawnfromtheINTVDDpincan greatlyincreaseinternalpowerdissipationatelevatedVCC voltages.Aminimumceramicbypasscapacitorof0.1µF isrecommended. CalculatingAveragePowerDissipation TheusershouldensurethatthemaximumratedICjunction temperatureisnotexceededunderalloperatingconditions. The thermal resistance of the LTC4011 package ( θJA) is38°C/W,providedtheexposedmetalpadisproperly solderedtothePCB.Theactualthermalresistanceinthe applicationwilldependontheamountofPCBcopperto whichthepackageissoldered.Feedthroughviasdirectly belowthepackagethatconnecttoinnercopperlayers arehelpfulinloweringthermalresistance.Thefollowing formulamaybeusedtoestimatethemaximumaverage power dissipation PD(inwatts)oftheLTC4011under normaloperatingconditions. where: IDD=AverageexternalINTVDDloadcurrent,ifany IVRT=Loadcurrentdrawnbytheexternalthermistor networkfromVRT,ifany QTGATE=GatechargeofexternalP-channelMOSFET incoulombs QBGATE=GatechargeofexternalN-channelMOSFET (ifused)incoulombs VLED=MaximumexternalLEDforwardvoltage RLED=ExternalLEDcurrent-limitingresistorusedin theapplication n=NumberofLEDsdrivenbytheLTC4011 SampleApplications Figures6through9detailsamplechargerapplications ofvariouscomplexities.CombinedwiththeTypicalAp- plicationonthefirstpageofthisdatasheet,theseFigures demonstrate some of the proper configurations of the LTC4011.MOSFETbodydiodesareshowninthesefigures strictlyforreferenceonly. Figure6showsaminimumapplication,whichmightbe encounteredinlowcostNiCdfastchargeapplications. FET-basedPowerPathcontrolallowsformaximuminput voltagerangefromtheDCadapter.TheLTC4011uses –∆V to terminate the fast charge state, as no external temperature information is available. Nonsynchronous PWMswitchingisemployedtoreduceexternalcomponent cost.AsingleLEDindicateschargingstatus. A3ANiMHapplicationofmediumcomplexityisshownin Figure7.PowerPathcontrolthatiscompletelyFET-based allowsforbothminimuminputvoltageoverheadandmini- mumswitchoverlosswhenoperatingfromthebattery. P-channelMOSFETQ4functionsasaswitchtoconnectthe batterytothesystemloadwhenevertheDCinputadapter isremoved.Ifthemaximumbatteryvoltageislessthan themaximumratedVGSofQ4,diodeD1andresistorR5 are not required. Otherwise choose the Zener voltage ofD1tobelessthanthemaximumratedVGSofQ4.R5 providesabiascurrentof(VBAT–VZENER)/(R5+20k)for D1whentheinputadapterisremoved.ChooseR5tomake thiscurrent,whichisdrawnfromthebattery,justlarge enoughtodevelopthedesiredVGSacrossD1. Precharge,fastchargeandtop-offstatesareindicatedby externalLEDs.TheVTEMPthermistornetworkallowsthe LTC4011toaccuratelyterminatefastchargeunderavariety ofappliedchargerates.UseofasynchronousPWMtopol- ogyimprovesefficiencyandlowerspowerdissipation. |
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