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ARF1501 Datasheet(PDF) 3 Page - Microsemi Corporation

Part # ARF1501
Description  RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

ARF1501 Datasheet(HTML) 3 Page - Microsemi Corporation

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HAZARDOUS MATERIAL WARNING
The ceramic portion of the
device between
leads and mounting surface is beryllium oxide,
BeO.
Beryllium oxide dust is toxic when in-
haled.
Care must be taken during handling
and mounting to avoid damage to this area
These devices must never be thrown away
with general industrial or domestic waste.
Heat Sink
D
S
S
G
S
S
D
G
S
S
S
S
ARF15--
BeO
1525-xx
.005
.045
.250
.500
.500
1.065
.207
.207
.375
.105 typ.
D
S
G
Thermal Considerations and Package
Mounting:
The rated 1500W power dissipation is only avail-
able when the package mounting surface is at
25
°C and the junction temperature is 200°C. The
thermal resistance between junctions and case
mounting surface is 0.12
°C/W. When installed, an
additional thermal impedance of 0.1
°C/W between
the package base and the mounting surface is typi-
cal. Insure that the mounting surface is smooth
and flat. Thermal joint compound must be used to
reduce the effects of small surface irregularities.
The heatsink should incorporate a copper heat
spreader to obtain best results.
The package is designed to be clamped to a
heatsink. A clamped joint maintains the required
mounting pressure while allowing for thermal ex-
pansion of both the device and the heat sink. A
simple clamp, and two 6-32 (M3.5) screws can pro-
vide the minimum 125lb required mounting force.
T = 12 in-lb.
Table 1 - Typical Class AB Large Signal Impedance -- ARF1501
F (MHz)
Zin (Ω)ZOL (Ω)
2.0
13.5
27
40
10.6 -j 12.2
0.5 -j 2.7
0.22 -j 0.8
0.2 +j .12
31 -j 4.7
15.6 -j 16
6.2 -j 12.6
3.1 -j 9.4
Zin - Gate shunted with 25Ω IDQ = 100mA
Z
OL - Conjugate of optimum load for 750 Watts
output at Vdd = 250V
ARF1501
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
SINGLE PULSE
T
C, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Output Characteristics
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
8V
5V
6V
7V
45
40
35
30
25
20
15
10
5
0
9V
10V
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:



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