Electronic Components Datasheet Search
  English  ▼

X  

BYI-1 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # BYI-1
Description  BYISTOR FOR LINEAR POWER AMPLIFIERS
PDF  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

BYI-1 Datasheet(HTML) 2 Page - Microsemi Corporation

  BYI-1 Datasheet HTML 1Page - Microsemi Corporation BYI-1 Datasheet HTML 2Page - Microsemi Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 2 page
background image
BYI datasheet Rev A
Microsemi reserves the right to change, without notice, the specifications and information contained
herein. Visit our web site at www.microsemi.com or contact our factory direct.
The key elements of a BYISTOR are:
•
A diode fabricated like and RF power transistor (
same material, geometry, and diffusion process) for
improved temperature tracking;
•
An internal silicon resistor to further improve
temperature tracking;
•
A package that can be physically attached to the
same heatsink used for the RF amplifier transistor (
available in a variety of stud, flange or flangeless
packages)
Fig. 1 shows the basic design of a BYISTOR. By providing a
constant current to the injector terminal, the diode acts as a
voltage source with approximately 0.3
Ω source impedance.
The addition of a silicon resistor (approximately 0.7
Ω )
increases the apparent source impedance of the BYISTOR to
approximately 1
Ω.
The silicon resistor increases in resistance, and the diode
voltage decreases with increasing temperature. As a result, the
source impedance of the BYISTOR increases, and the bias
voltage decreases with increasing temperature (see Fig 2 & 3).
By mounting the package on the same heatsink as the RF
transistor, the BYISTOR will thermally track the transistor and
compensate for the reduction in Vbe. The result is improved
D.C. stability of the amplifier and elimination of D.C. thermal
runaway of the RF transistor..
Circuit Applications
To effectively use a BYISTOR , it should be mounted on the
same heastink and as physically close to the RF power
transistor as possible. Connect the bias circuit as shown in Fig.
4 for class AB operation. Provide approximately 350 mA form
any convenient voltage into the injector terminal. Then, adjist
R2 until the desired static collector current is achieved
(increasing R2 increases the V be and increases the static
collector current). No further effort is required. The bias circuit
using the BYISTOR will now:
*Provide the appropriate static collector current;
*Provide a low impedance D.C. voltage source
*Thermally track the RF transistor and compensate for
increasing temperatures, eliminating D.C. thermal runaway
problems.
BYI-1



Html Pages

1 2


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com