MS1076

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

DESCRIPTION:

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor

designed primarily for SSB and VHF communications. This

device utilizes an emitter ballasted die geometry for maximum

ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector - Base Voltage

70

V

Collector - Emitter Voltage

35

V

Emitter - Base Voltage

4.0

V

Device Current

16

A

Power Dissipation

250

W

Junction Temperature

+200

°C

Storage Temperature

- 65 to +150

°C

Thermal Data

Junction - Case Thermal Resistance

0.7

°C/W

Rev A: October 2009

Features

• 30 MHz

• 28 VOLTS

• GOLD METALLIZATION

• P

• G

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS