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MS1076 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # MS1076
Description  RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
PDF  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MS1076 Datasheet(HTML) 2 Page - Microsemi Corporation

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MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCES
IC = 100 mA
70
---
---
V
BVCEO
IC = 200 mA
35
---
---
V
BVEBO
IE = 20 mA
4.0
---
---
V
ICEO
VCE = 30 V
---
---
5
mA
ICES
VCE = 35 V
---
---
5
mA
HFE
VCE = 5 V,
IC = 7 A
15
---
60
---
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
220
---
---
WPEP
GP
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
12
---
---
dB
η
C
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
40
---
---
%
IMD
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
---
---
-30
dBc
COB
f = 1 MHz
VCB = 28 V
---
450
---
pf
Conditions
f1 = 30.000 MHz
f2 = 30.001 MHz
HFE BINNING (marked on lid with appropriate letter):
A = 15-19
D = 27-32
G = 45-50
B = 19-22.5
E = 32-38
H = 50-55
C = 22.5-27
F = 38-45
I = 55-60
IMPEDANCE DATA
FREQ
ZIN
ZCL
30 MHz
1.2 + j0.41
1.25 + j1.92



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