BC859 datasheet(2/4 Pages) RECTRON

2 / 4 page

CHARACTERISTICS

SYMBOL

UNITS

200

Collector–emitter voltage (+VBE= 1 V)

-VCBO

-ICBO

-VBE

-VCEsat

-VBEsat

-VCEX

-VEBO

IEM

-IBM

-IC

-ICM

Ptot

Tstg

MAX

-VCEO

MIN

100

150

250

200

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

Collector–emitter voltage (open base)

Emitter–base voltage (open collector)

Collector current (d.c.)

Collector current (peak value)

Emitter current (peak value)

Base current (peak value)

Total power dissipation up to Tamb = 60 °C**

Storage temperature

-55 to +150

Junction temperature

THERMAL CHARACTERISTICS

Tj= Px(Rth j–t+ Rh t–s+ Rth s–a) + Tamb

Thermal resistance

From junction to tab

Rth j–t

K/W

From tab to soldering points

Rth t–s

280

K/W

From soldering points to ambient**

Rth s–a

K/W

CHARACTERISTICSTj = 25 °C unless otherwise specified

Collector cut–off current

IE= 0; -VCB = 30V; Tj= 25°C

typ. 1

typ. 650

typ. 75

typ. 250

typ. 700

typ. 850

typ. 4.5

< 300

< 650

< 15

< 820

< 4

Base–emitter voltage

-IC= 2 mA; -VCE = 5 V

-IC= 10 mA; -VCE = 5 V

600 to 750

Saturation voltages

-IC= 10 mA; -IB = 0,5 mA

-IC= 100 mA; -IB = 5 mA

-IE = Ie= 0 ; -VCB = 10 V

Collector capacitance at f = 1 MHz

IE = Ie = 0; –VCB = 10 V

typ.

4,5

Tj= 150°C

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