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MMBT4403 Datasheet(PDF) 2 Page - Rectron Semiconductor |
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MMBT4403 Datasheet(HTML) 2 Page - Rectron Semiconductor |
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2 / 6 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS (1) Chatacteristic Collector-Emitter Breakdown Voltage(1) (IC= -1.0 mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= -0.1mAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= -0.1mAdc, IC= 0) Base Cutoff Current (VCE= -35Vdc, VBE(off)= -0.4Vdc) Collector Cutoff Current (VCE= -35Vdc, VEB= -0.4Vdc) DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc) (IC= -10mAdc, VCE= -1.0Vdc) (IC= -1.0mAdc, VCE= -1.0Vdc) V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc ICEX IBEV - -0.1 - -0.1 hFE 30 - - 60 - 100 - 100 300 uAdc uAdc Symbol Min Max Unit (IC= -150mAdc, VCE= -2.0Vdc) Collector-Emitter Saturation Voltage (1) (IC= -150mAdc, IB= -15mAdc) (IC= -500mAdc, IB= -50mAdc) (IC= -500mAdc, VCE= -2.0Vdc) Vdc VCE(sat) 20 - - -0.4 - -0.75 Vdc VBE(sat) -0.75 -0.95 - -1.3 Base-Emitter Saturation Voltage (1) (IC= -150mAdc, IB= -15mAdc) (IC= -500mAdc, IB= -50mAdc) SMALL-SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS fT 200 - MHz Current-Gain-Bandwidth Product (IC= -20mAdc, VCE= -10Vdc, f= 100MHz) Ccb Ceb - 8.5 pF pF td tr ts tf - - - - ns ns hie - 30 1.5 15 kohms hre 0.1 8.0 60 500 X 10-4 hfe 1.0 100 - hoe 225 30 15 20 umhos Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz) Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz) Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz) Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz) (VCC= -30Vdc, VEB= -2.0Vdc, IC= -150mAdc, IB1= -15mAdc) (VCC= -30Vdc, IC= -150mAdc, IB1= IB2= -15mAdc) Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz) Delay Time Rise Time Storage Time Fall Time Note : Pulse Test: Pulse Width<300ms,Duty Cycle<2.0% - - |
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