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N-channel Enhancement-mode Power MOSFET

Low gate-charge

30V

Simple drive requirement

12m

Ω

Fast switching

45A

DESCRIPTION

G

D

S

G

D S

TO-263 (S)

G

D

S

TO-220(P)

The SSM60T03GS is in a TO-263 package, which is widely used for

commercial and industrial surface-mount applications. This device is

suitable for low-voltage applications such as DC/DC converters.

The through-hole version, the SSM60T03GP in TO-220, is available for

vertical-mounting, where a small footprint is required on the board, and/or

an external heatsink is to be attached.

These devices are manufactured with an advanced process, permitting

operation up to a maximum junction temperature of 175°C.

ABSOLUTE MAXIMUM RATINGS

Symbol

Units

W/°C

Symbol

Value

Units

Maximum Thermal Resistance Junction-case

3.4

°C/W

Maximum Thermal Resistance Junction-ambient

62

°C/W

Parameter

Rating

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

45

A

Continuous Drain Current

32

A

Pulsed Drain Current

1

120

A

Total Power Dissipation

44

W

-55 to 175

°C

Operating Junction Temperature Range

-55 to 175

°C

Linear Derating Factor

0.352

THERMAL DATA

Parameter

Storage Temperature Range

Pb-free, RoHS compliant.

SSM60T03GP,S

9/16/2005 Rev.3.1