Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-source breakdown voltage

200

-

-

V

Breakdown voltage temperature coefficient

-

0.248

-

V/°C

Static drain-source on-resistance

-

-

400

m

Ω

Gate threshold voltage

2

-

4

V

Forward transconductance

-

40

-

S

Drain-source leakage current

V

-

-

10

uA

-

-

25

uA

Gate-source leakage current

-

-

±100

nA

Total gate charge

2

-

25

-

nC

Gate-source charge

-

3.6

-

nC

Gate-drain ("Miller") charge

-

14

-

nC

Turn-on delay time

2

-

8

-

ns

Rise time

-

26

-

ns

Turn-off delay time

-

34

-

ns

Fall time

-

22

-

ns

Input capacitance

-

515

-

pF

Output capacitance

-

90

-

pF

Reverse transfer capacitance

f=1.0MHz

-

40

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward voltage

2

-

-

1.3

V

Continuous source current (body diode)

-

-

36

A

-

-

9

A

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SSM630GP

8/22/2006 Rev.3.1