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N-channel Enhancement-mode Power MOSFET

200V

400m

Ω

9A

The SSM630GP achieves fast switching performance

with low gate charge without a complex drive circuit. It is

suitable for low voltage applications such as DC/DC

Pb-free; RoHS-compliant TO-220

PRODUCT SUMMARY

DESCRIPTION

Notes:

1. Pulse width must be limited to avoid exceeding the safe operating area.

2. Pulse width <300us, duty cycle <2%.

converters and general load-switching circuits.

The SSM630GP is in TO-220 for through-hole mounting

where a small footprint is required on the board, and/or an

G

D

S

TO-220 (suffix P)

external heatsink is to be attached.

These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Units

W/°C

Single pulse avalanche energy

3

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-case

1.7

°C/W

Maximum thermal resistance, junction-ambient

62

°C/W

Drain-source voltage

200

V

Gate-source voltage

±30

V

9

A

5.7

A

Pulsed drain current

1

36

A

74

W

-55 to 150

°C

Operating junction temperature range

-55 to 150

°C

Linear derating factor

0.59

240

mJ

THERMAL CHARACTERISTICS

Storage temperature range

SSM630GP

8/22/2006 Rev.3.1

Avalanche current

9

A

Repetitive avalanche energy

7

mJ