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SSM2302N Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM2302N Datasheet(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page ![]() www.SiliconStandard.com 1 of 6 SSM2302N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline RDS(ON) 85m Ω Surface-mount package ID 2.8A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID @ TA=25°C ID @ TA=70°C IDM A PD @ TA=25°C W/°C TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 100 °C/W Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current 3, V GS @ 4.5V 2.8 A Continuous Current 3, V GS @ 4.5V 2.2 A Pulsed Drain Current 1,2 10 Total Power Dissipation 1.25 W -55 to 150 °C Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.01 Thermal Data Parameter Storage Temperature Range ± 12 G D S D G S SOT-23 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Rev.2.02 3/12/2004 |
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