N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

01/28/2008 Rev.1.00

www.SiliconStandard.com

1

PRODUCT SUMMARY

Simple Drive Requirement

Low On-resistance

Fast Switching

Characteristic

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

ABSOLUTE MAXIMUM RATINGS

THERMAL DATA

Pb-free; RoHS-compliant

30V

27mΩ

7A

P-CH

-30V

49mΩ

-5A

D1

D1

D2

D2

S1

G1

S2

G2

PDIP-8

G2

D2

S2

G1

D1

S1

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

3

-5

A

Continuous Drain Current

3

-4.2

A

Pulsed Drain Current

1

-30

A

Total Power Dissipation

W

Linear Derating Factor

W/℃

Storage Temperature Range

℃

Operating Junction Temperature Range

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

℃/W

Parameter

40

2

30

±20

7

-55 to 150

0.016

-55 to 150

5.8

SSM4501GSD