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SSM4507M Datasheet(PDF) 5 Page - Silicon Standard Corp. |
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SSM4507M Datasheet(HTML) 5 Page - Silicon Standard Corp. |
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5 / 7 page ![]() www.SiliconStandard.com 5 of 7 SSM4507M Rev.1.01 4/06/2004 N-channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0 2 4 6 8 10 12 0246 8 10 12 Q G , Total Gate Charge (nC) I D =6 A V DS =24V 10 100 1000 1 5 9 1317 2125 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1ms 10ms 100ms 1s 10s DC |
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