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SSM4507M

Rev.1.01 4/06/2004

COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Simple drive requirement

N-Ch

30V

Lower gate charge

36m

Ω

Fast switching performance

6.0A

P-Ch

-30V

72m

Ω

Description

-4.2A

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

±20

±20

V

Continuous Drain Current

3

6

-4.2

A

Continuous Drain Current

3

4.8

-3.4

A

Pulsed Drain Current

1

20

-20

A

Total Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

°C/W

Parameter

Thermal Data

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is widely preferred for commercial and

industrial surface mount applications and is well suited for

low-voltage applications such as DC/DC converters.

S1

G1

S2

G2

D1

D1

D2

D2

G2

D2

S2

G1

D1

S1

S1

G1

S2

G2

D1

D1

D2

D2

SO-8