SSM4513M datasheet(4/8 Pages) SSC

Part #	SSM4513M

Description	N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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SSM4513M/GM

10/12/2004 Rev.2.01

N-channel

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance vs. Gate Voltage

Fig 4. Normalized On-Resistance

vs. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage vs.

Reverse Diode

Junction Temperature

345

V DS , Drain-to-Source Voltage (V)

T A =25

o C

10V

7.0V

5.0V

4.5V

V G =3.0V

345

V DS , Drain-to-Source Voltage (V)

T A = 150

o C

10V

7.0V

5.0V

4.5V

V G =3.0V

V GS , Gate-to-Source Voltage (V)

I D =3A

T A =25

o C

0.6

1.0

1.4

1.8

-50

100

150

T j , Junction Temperature (

o C)

I D =5A

V G =10V

0.2

0.4

0.6

0.8

1.2

V SD , Source-to-Drain Voltage (V)

T j =25

o C

T j =150

o C

0.3

0.7

1.1

1.5

-50

100

150

T j ,Junction Temperature (

o C)

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