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SSM4513M/GM

10/12/2004 Rev.2.01

N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Simple drive requirement

N-CH

35V

Low on-resistance

36m

Ω

Fast switching performance

5.8A

P-CH

-35V

68m

Ω

Description

I

D

-4.3A

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

35

-35

V

Gate-Source Voltage

±20

±20

V

Continuous Drain Current

3

5.8

-4.3

A

Continuous Drain Current

3

4.7

-3.4

A

Pulsed Drain Current

1

20

-20

A

Total Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

°C/W

Parameter

Thermal Data

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching, ruggedized

device design, low on-resistance and cost-effectiveness.

G2

D2

S2

G1

D1

S1

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

The SSM4513M is in the SO-8 package, which is widely

preferred for commercial and industrial surface mount applications,

and is well-suited for most low voltage applications.

This device is available with Pb-free lead finish (second-level interconnect) as SSM4513GM.