HAL855 datasheet(5/42 Pages) MICRONAS

5 / 42 page

DATA SHEET

HAL855

Micronas

Nov. 26, 2008; DSH000149_003EN

Programmable Linear Hall-Effect Sensor with Arbi-

trary Output Characteristic

Release Note: Revision bars indicate significant

changes to the previous edition.

1. Introduction

The HAL 855 is a member of the Micronas family of

programmable linear Hall sensors. As an extension to

the HAL 8x5 family, the HAL855 offers an arbitrary out-

put characteristic and individual programming of differ-

ent sensors which are in parallel to the same supply

voltage.

The HAL 855 is an universal magnetic field sensor

based on the Hall effect. The IC is designed and pro-

duced in sub-micron CMOS technology and can be

used for angle or distance measurements if combined

with a rotating or moving magnet. The major charac-

teristics like magnetic field range, output characteristic,

output format, sensitivity, shift (offset), PWM period

and the temperature coefficients are programmable in

a non-volatile memory. The output characteristic can

be set with 32 setpoints.

The HAL 855 features a temperature-compensated

Hall plate with choppered offset compensation, an

A/D-converter, digital signal processing, an EEPROM

memory with redundancy and lock function for the cali-

bration data, a serial interface for programming the

EEPROM, and protection devices at all pins. The inter-

nal digital signal processing is of great benefit because

analog offsets, temperature shifts, and mechanical

stress do not degrade the sensor accuracy.

The HAL855 is programmable by means of modulat-

ing the supply voltage. No additional programming pin

is needed. The easy programmability allows a 2-point

calibration by adjusting the output signal directly to the

input signal (like mechanical angle, distance, or cur-

rent). Individual adjustment of each sensor during the

customer’s manufacturing process is possible. With

this calibration procedure, the tolerances of the sensor,

the magnet, and the mechanical positioning can be

compensated in the final assembly. This offers a low-

cost alternative for all applications that presently need

mechanical adjustment or laser trimming for calibrating

the system.

In addition, the temperature compensation of the Hall

IC can be fitted to all common magnetic materials, by

programming first and second order temperature coef-

ficients of the Hall sensor sensitivity. This enables

operation over the full temperature range with high

accuracy.

The calculation of the individual sensor characteristics

and the programming of the EEPROM memory can

easily be done with a PC and the application kit from

Micronas. The sensors are designed for automotive or

industrial applications. They operate with ambient tem-

peratures from

−40 °C up to 150 °C. The HAL855 is

available in the very small leaded package TO92UT-1

and TO92UT-2.

1.1. Major Applications

Due to the sensor’s versatile programming character-

istics, the HAL855 is the optimal system solution for

applications such as:

– contactless potentiometers,

– rotary position measurement (e.g., pedal sensor),

– fluid level measurement,

– linear position detection, and

– magnetic field detection.

1.2. Features

– high-precision linear Hall effect sensors with differ-

ent output formats

– various programmable magnetic characteristics with

non-volatile memory

– programmable output characteristic

(32 setpoints with 9-bit resolution)

– programmable output formats

(PWM or serial Biphase-M)

– programmable PWM period

– open-drain output

– digital signal processing

– temperature characteristics programmable for

matching all common magnetic materials

– programming by modulation of the supply voltage

– lock function and built-in redundancy for EEPROM

memory

– operates from –40 °C up to 150 °C ambient temper-

ature

– operates from 4.5 V up to 18 V supply voltage

– operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz

– choppered offset compensation

– overvoltage protection on all pins

– reverse-voltage protection on VDD pin

– magnetic characteristics extremely robust against

mechanical stress

– short-circuit-protected output

– EMC-optimized design

– programmable slew rate for optimized EMI behavior

HAL855 Datasheet(PDF) 5 Page - Micronas

HAL855 Datasheet(HTML) 5 Page - Micronas

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

Datasheet Download

Link URL