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ADC1010S Datasheet(PDF) 21 Page - NXP Semiconductors |
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ADC1010S Datasheet(HTML) 21 Page - NXP Semiconductors |
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21 / 36 page ![]() ADC1010S_SER_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 01 — 9 April 2010 21 of 36 NXP Semiconductors ADC1010S series ADC1010S series; CMOS or LVDS DDR digital outputs The output resistance is 50 Ω and is the combination of the an internal resistor and the equivalent output resistance of the buffer. There is no need for an external damping resistor. The drive strength of both data and DAV buffers can be programmed via the SPI in order to adjust the rise and fall times of the output digital signals (see Table 30): 11.5.2 Digital output buffers: LVDS DDR mode The digital output buffers can be configured as LVDS DDR by setting bit LVDS/CMOS to 1 (see Table 23). Each output should be terminated externally with a 100 Ω resistor (typical) at the receiver side (Figure 22) or internally via SPI control bits LVDS_INT_TER[2:0] (see Figure 23 and Table 32). The default LVDS DDR output buffer current is set to 3.5 mA. It can be programmed via the SPI (bits DAVI[1:0] and DATA[1:0]; see Table 31) in order to adjust the output logic voltage levels. Fig 22. LVDS DDR digital output buffer - externally terminated Fig 23. LVDS DDR digital output buffer - internally terminated VCCO 3.5 mA typ DnP/Dn + 1P DnM/Dn + 1M OGND 100 Ω − 005aaa058 + − + RECEIVER VCCO OGND 005aaa059 DxP/Dx + 1P DxM/Dx + 1M 100 Ω 3.5 mA typ + − + − RECEIVER |
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