BAS45A datasheet(3/8 Pages) NXP

3 / 8 page

1996 Mar 13

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS45A

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

Device mounted on a printed-circuit board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

see Fig.3

IF = 1 mA

−

780

IF = 10 mA

−

860

IF = 100 mA

−

1000

reverse current

see Fig.5

VR = 125 V; Emax = 100 lx

−

VR = 30 V; Tj = 125 °C; Emax = 100 lx

−

300

VR = 125 V; Tj = 125 °C; Emax = 100 lx

−

500

VR = 125 V; Tj = 150 °C; Emax = 100 lx

−

μA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

1.5

−

μs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

8 mm from the body

300

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

500

K/W

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