BAT18 datasheet(2/7 Pages) NXP

2 / 7 page

9397 750 13385

Product data sheet

Rev. 02 — 31 August 2004

2 of 7

Philips Semiconductors

BAT18

Silicon planar diode

Marking

[1]

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China.

Limiting values

Thermal characteristics

[1]

Device mounted on a FR4 printed-circuit board.

Characteristics

Table 3:

Marking

Type number

Marking code [1]

BAT18

10*

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

continuous reverse voltage

continuous forward current

100

Tstg

storage temperature

−55

+125

°C

junction temperature

125

°C

Table 5:

Thermal characteristics

Tj = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-tp)

thermal resistance from junction to tie-point

330

K/W

Rth(j-a)

thermal resistance from junction to ambient

[1] 500

K/W

Table 6:

Electrical characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

forward voltage

IF = 100 mA; see Figure 1

1.2

reverse current

see Figure 2

VR = 20 V

100

VR = 20 V; Tj =60 °C

--1

µA

diode capacitance VR = 20 V; f = 1 MHz; see Figure 3

0.8

1.0

diode forward

resistance

IF = 5 mA; f = 200 MHz; see Figure 4

0.5

0.7

Ω

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