BAW56 datasheet(5/15 Pages) NXP

5 / 15 page

BAV756S_BAW56_SER_5

Product data sheet

Rev. 05 — 26 November 2007

5 of 15

NXP Semiconductors

BAV756S; BAW56 series

High-speed switching diodes

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reﬂow soldering is the only recommended soldering method.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

[2]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

[3]

When switched from IF = 10 mA; tr =20ns.

Rth(j-sp)

thermal resistance from

junction to solder point

BAV756S

255

K/W

BAW56

360

K/W

BAW56S

255

K/W

BAW56T

350

K/W

BAW56W

300

K/W

Table 7.

Thermal characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

[1]

IF = 1 mA

715

IF = 10 mA

855

IF = 50 mA

--1

IF = 150 mA

1.25

reverse current

VR = 25 V

--30

VR = 80 V

0.5

µA

VR =25V; Tj = 150 °C

--30

µA

VR =80V; Tj = 150 °C

150

µA

diode capacitance

VR = 0 V; f = 1 MHz

trr

reverse recovery time

[2] --4

VFR

forward recovery voltage

[3] -

1.75

BAW56 Datasheet(PDF) 5 Page - NXP Semiconductors

BAW56 Datasheet(HTML) 5 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL