BC856AW datasheet(4/10 Pages) NXP

4 / 10 page

2002 Feb 04

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC856W; BC857W; BC858W

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −30 V; IE = 0

−

−1

−15

VCB = −30 V; IE = 0;

Tj = 150 °C

−

−4

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−100

hFE

DC current gain

IC = −2 mA; VCE = −5 V

BC856W

125

−

475

BC857W; BC858W

125

−

800

BC856AW; BC857AW

125

−

250

BC856BW; BC857BW

220

−

475

BC857CW

420

−

800

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA −

−75

−300

IC = −100 mA; IB = −5 mA;

note 1

−

−250

−600

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA −

−700

−

IC = −100 mA; IB = −5 mA;

note 1

−

−850

−

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V

−600

−650

−750

IC = −10 mA; VCE = −5 V

−

−820

collector capacitance

VCB = −10 V; IE = Ie = 0;

f = 1 MHz

−

emitter capacitance

VEB = −0.5 V; IC = Ic = 0;

f = 1 MHz

−

transition frequency

VCE = −5 V; IC = −10 mA;

f = 100 MHz

100

−

MHz

noise figure

IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz;

B = 200 Hz

−

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