BC869 datasheet(7/11 Pages) NXP

7 / 11 page

2004 Nov 08

NXP Semiconductors

Product data sheet

PNP medium power transistor;

20 V, 1 A

BC869

handbook, halfpage

(5)

(7)

(A)

VCE (V)

−2.4

−1.6

−0.8

−1

−5

−2

−3

−4

MLE317

(8)

(6)

(4)

(2)

(1)

−2.0

−1.2

−0.4

(9)

(3)

(10)

Fig.5

Collector current as a function of

collector-emitter voltage; typical values.

BC869-16.

(1) IB = −18 mA.

(2) IB = −16.2 mA.

(3) IB = −14.4 mA.

(4) IB = −12.6 mA.

(5) IB = −10.8 mA.

(6) IB = −9.0 mA.

(7) IB = −7.2 mA.

(8) IB = −5.4 mA.

(9) IB = −3.6 mA.

(10) IB = −1.8 mA.

handbook, halfpage

−10−1

MLE314

−1

−10−4

−10−3

−10−2

−10−1

−1

IC (A)

VBE

(V)

−10

Fig.6

Base-emitter voltage as a function of

collector current; typical values.

BC869-16.

VCE = −1 V.

handbook, halfpage

102

103

MLE319

−10−4

−10−3

−10−2

−10−1

−1

−10

IC (A)

hFE

Fig.7

DC current gain as a function of collector

current; typical values.

BC869-16.

VCE = −1 V.

handbook, halfpage

MLE320

−1

−10−1

−10−2

−10−3

−10−4

−10−3

−10−2

−10−1

IC (A)

VCEsat

(V)

−1

−10

Fig.8

Collector-emitter saturation voltage as a

function of collector current; typical values.

BC869-16.

IC/IB = 10.

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