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Si1012R/X Datasheet(PDF) 5 Page - Texas Instruments

Part # Si1012R/X
Description  Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO
PDF  8 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

Si1012R/X Datasheet(HTML) 5 Page - Texas Instruments

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Features
Proper sequencing is ensured in the design with the use of a NPN transistor and a N-channel MOSFET.
As required, Core 1.2 V at 600 mA comes first , which in turn pulls up the gate of a N-channel MOSFET to
3.3 V with the use of a NPN transistor. Then 1.2 V + VRTC at 251 mA comes up. This 1.2 V further
enables the DCDC1 and sequentially 1.8 V comes up, which again enables an LDO to give 3.3 V at 115
mA.
(1)
Use three such LDOs to power up DVDDA, DVDDB, and DVDDC. (It can be either 1.8 V or 3.3 V.)
(2)
Rx = 0.499 M
Ω, Ry = 1 MΩ for Vout = 1.8 V
(3)
Rx = 1.8 M
Ω, Ry = 1 MΩ for Vout = 3.3 V
(4)
For proper sequencing of output, enable of the LDOs are fed either from a 1.2-V output from TPS62420
DCDC2 if DVDDX is 1.8 V or from a 1.8-V output from TPS62420 DCDC1 if DVDDX is 3.3 V.
Figure 2. Optional Circuit for DVDD_A, DVDD_B and DVDD_C
5
SLVA343A – June 2009 – Revised May 2010
Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO
Copyright © 2009–2010, Texas Instruments Incorporated



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