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PDTA143XM Datasheet(PDF) 6 Page - NXP Semiconductors |
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PDTA143XM Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 6 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 k Ω, R2 = 10 kΩ VCE = −5V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values VCE = −0.3 V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C VCE = −5V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 3. On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values 006aaa202 IC (mA) −10−1 −102 −10 −1 102 10 103 hFE 1 (1) (2) (3) 006aaa203 −102 −103 VCEsat (mV) −10 IC (mA) −1 −102 −10 (1) (2) (3) IC (mA) −10−1 −102 −10 −1 006aaa204 −4 −6 −2 −8 −10 VI(on) (V) 0 (1) (2) (3) IC (mA) −10−2 −10 (1) (2) (3) −1 −10−1 006aaa205 −0.8 −1.2 −0.4 −1.6 −2.0 VI(off) (V) 0 |
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