PEMB15_PUMB15_4

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 04 — 31 August 2009

3 of 11

NXP Semiconductors

PEMB15; PUMB15

PNP/PNP resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 4.7 kΩ

5.

Limiting values

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

6.

Thermal characteristics

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

−50

V

collector-emitter voltage

open base

-

−50

V

emitter-base voltage

open collector

-

−10

V

input voltage

positive

-

+10

V

negative

-

−30

V

output current (DC)

-

−100

mA

peak collector current

-

−100

mA

total power dissipation

SOT363

[1] -

200

mW

SOT666

[1] [2] -

200

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

Per device

total power dissipation

SOT363

[1] -

300

mW

SOT666

[1] [2] -

300

mW

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

thermal resistance from

junction to ambient

SOT363

[1] -

-

625

K/W

SOT666

[1] [2] -

-

625

K/W

Per device

thermal resistance from

junction to ambient

SOT363

[1] -

-

416

K/W

SOT666

[1] [2] -

-

416

K/W