PEMB15 datasheet(4/11 Pages) NXP

4 / 11 page

PEMB15_PUMB15_4

Product data sheet

Rev. 04 — 31 August 2009

4 of 11

NXP Semiconductors

PEMB15; PUMB15

PNP/PNP resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 4.7 kΩ

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = −50 V; IE = 0 A

−100

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB = 0 A

−1

µA

VCE = −30 V; IB = 0 A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

−0.9

hFE

DC current gain

VCE = −5 V; IC = −10 mA

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

−150

VI(off)

off-state input voltage

VCE = −5 V; IC = −100 µA-

−1.1

−0.5

VI(on)

on-state input voltage

VCE = −0.3 V; IC = −20 mA

−2.5

−1.9

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB = −10 V; IE = ie = 0 A;

f=1MHz

--3

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