PEMD48 datasheet(5/12 Pages) NXP

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PEMD48_PUMD48_5

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Product data sheet

Rev. 05 — 13 April 2010

5 of 12

NXP Semiconductors

PEMD48; PUMD48

NPN/PNP resistor-equipped transistors

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base

cut-off current

VCB =50V;

IE =0A

100

ICEO

collector-emitter

cut-off current

VCE =30V;

IB =0A

μA

VCE =30V;

IB =0A;

Tj =150 °C

μA

Transistor TR1 (NPN)

IEBO

emitter-base

cut-off current

VEB =5 V;

IC =0 A

μA

hFE

DC current gain

VCE =5V;

IC =5 mA

VCEsat

collector-emitter

saturation voltage

IC =10 mA;

IB =0.5 mA

150

VI(off)

off-state input voltage

VCE =5V;

IC = 100 μA

-1.2

0.8

VI(on)

on-state input voltage

VCE =0.3 V;

IC =2 mA

31.6

bias resistor 1 (input)

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V;

IE =ie =0A;

f=1MHz

2.5

Transistor TR2 (PNP)

IEBO

emitter-base

cut-off current

VEB = −5V;

IC =0 A

−180

μA

hFE

DC current gain

VCE = −5V;

IC = −10 mA

100

VCEsat

collector-emitter

saturation voltage

IC = −5mA;

IB = −0.25 mA

−100

VI(off)

off-state input voltage

VCE = −5V;

IC = −100 μA

−0.6

−0.5

VI(on)

on-state input voltage

VCE = −0.3 V;

IC = −5mA

−1.1

−0.75

bias resistor 1 (input)

1.54

2.2

2.86

R2/R1

bias resistor ratio

collector capacitance

VCB = −10 V;

IE =ie =0A;

f=1MHz

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