PH2369 datasheet(3/7 Pages) NXP

3 / 7 page

2004 Oct 11

NXP Semiconductors

Product data sheet

NPN switching transistor

PH2369

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 20 V; IE = 0 A

−

400

VCB = 20 V; IE = 0 A; Tj = 125 °C

−

µA

IEBO

emitter-base cut-off current

VEB = 4 V; IC = 0 A

−

100

hFE

DC current gain

VCE = 1 V; IC = 10 mA

120

VCE = 1 V; IC = 10 mA; Tamb = −55 °C

−

VCE = 2 V; IC = 100 mA

−

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 1 mA

−

250

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 1 mA

700

850

collector capacitance

VCB = 5 V; IE = ie = 0 A; f = 1 MHz

−

emitter capacitance

VEB = 1 V; IC = ic = 0 A; f = 1 MHz

−

4.5

transition frequency

VCE = 10 V; IC = 10 mA; f = 100 MHz

500

−

MHz

Switching times (between 10 % and 90 % levels)

ton

turn-on time

ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA;

see Fig.2 test conditions A

−

delay time

−

rise time

−

toff

turn-off time

−

storage time

−

fall time

−

ton

turn-on time

ICon = 100 mA; IBon = 40 mA; IBoff = −20 mA;

see Fig.2 test conditions B

−

toff

turn-off time

−

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