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PMST3906 Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMST3906 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 10 page ![]() PMST3906_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 29 April 2009 5 of 10 NXP Semiconductors PMST3906 40 V, 200 mA PNP switching transistor 8. Test information IC/IB =10 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values −103 −102 −10 mhc463 −10−1 −1 −10 IC (mA) VCEsat (mV) −102 −103 (1) (2) (3) VI = 5 V; t = 500 µs; tp =10 µs; tr =tf ≤ 3ns R1 = 56 Ω; R2 = 2.5 kΩ; R B = 3.9 kΩ; RC = 270 Ω VBB = 1.9 V; VCC = −3V Oscilloscope: input impedance ZI =50 Ω Fig 6. Test circuit for switching times RC R2 R1 DUT mgd624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC |
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