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TPCF8003 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCF8003 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page ![]() TPCF8003 2010-01-14 4 ID – VDS 5 15 10 5 0 20 0 2 4 3 1 VGS = 1.6 V 10 4.5 2.2 1.8 2 2.4 2.6 2.8 3 6 ID – VDS 5 3 2 0 4 1 0 0.2 0.4 0.6 0.8 VGS = 1.6 V 10 1 4.5 2.2 1.7 1.8 1.9 2 2.4 2.6 2.8 3 6 1 0.1 10 1000 100 100 4.5 VGS = 2.5 V 1 10 0 0.3 0 ID = 7 A 2 4 8 1.8 3.5 0.2 10 6 0.1 0.4 0.5 0 0 1 24 14 Ta = −55°C 25 100 2 3 10 8 4 6 12 0.5 1.5 3.5 2.5 Drain-source voltage VDS (V) Drain current ID (A) RDS (ON) – ID Drain-source voltage VDS (V) Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test |
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